? 2006 ixys all rights reserved polarhv tm hiperfet power mosfet v dss = 600 v i d25 =20a r ds(on) 200 m ? ? ? ? ? t rr 200 ns n-channel enhancement mode avalanche rated fast intrinsic diode features l silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation l international standard package l fast recovery diode l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.0 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = i t (note 1) 200 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c20a i dm t c = 25 c, pulse width limited by t jm 80 a i ar t c = 25 c36a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 208 c t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 20..120/4.6..27 n/lb weight 5 g g = gate d = drain s = source s g d isoplus247 (ixfr) e153432 (electrically isolated back surface) ds99395e(03/06) ixfr 36n60p isolated tab
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 36n60p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = i t , pulse test 25 40 s c iss 5800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 570 pf c rss 30 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss, i d = i t 25 ns t d(off) r g =2 ? (external) 80 ns t f 22 ns q g(on) 102 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 34 nc q gd 36 nc r thjc 0.6 c/w r thcs 0.15 c/w note 1: test current i t = 18 a source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 36 a i sm repetitive 80 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 200 ns q rm v r = 100v, v gs = 0 v 0.8 c i rm 6.0 a ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 isoplus247 (ixfr) outline
? 2006 ixys all rights reserved ixfr 36n60p fig. 2. exte nde d output characte ris tics @ 25 o c 0 10 20 30 40 50 60 70 80 90 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ 125 o c 0 4 8 12 16 20 24 28 32 36 02 46810121416 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 28 32 36 01234567 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on ) norm alize d to i d = 18a value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50-25 0 255075100125150 t j - degrees centigrade r d s ( o n ) - normalized i d = 36a i d = 18a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 18a value vs . i d 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 102030405060708090 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v fig. 6. drain current vs. case tem perature 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 36n60p fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 1020 3040 5060 7080 90100110 q g - nanocoulombs v g s - volts v ds = 300v i d = 18a i g = 10ma fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 3.5 4 4.5 5 5.5 6 6.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 10203040506070 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. maxim um transient therm al resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w
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